Method of forming improved contacts from polysilicon to silicono

Details Method of forming improved contacts from polysilicon to silicono Method of forming improved contacts from polysilicon to silicono

1996-01-03

1998-09-01

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438560, 438564, 148DIG38, 148DIG123, H01L 21225, H01L 2128

Patent

active

058010874

ABSTRACT:
The method of the present invention introduces a method of forming conductively doped contacts on a supporting substrate in a semiconductor device that minimizes the lateral out-diffusion of the conductive dopants and also provides for a low resistive contact by the steps of: preparing a conductive area to accept contact formation; forming a phosphorus insitu doped polysilicon layer over the conductive area; forming an arsenic insitu doped polysilicon layer over the phosphorus insitu doped polysilicon layer, wherein the two insitu doped polysilicon layers are deposited one after another in separate deposition steps; and annealing the layers at a temperature range of approximately 900.degree.-1100.degree. C. thereby, resulting in sufficient thermal treatment to allow phosphorus atoms to break up a first interfacial silicon dioxide layer formed between the conductive area and the phosphorus insitu doped polysilicon layer.

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