Method of forming hemispherical grained silicon

Details Method of forming hemispherical grained silicon Method of forming hemispherical grained silicon

1997-04-02

1998-06-02

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 8, 438398, 438665, 438964, C30B 3122

Patent

active

057592624

ABSTRACT:
A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.

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patent: 5418180 (1995-05-01), Brown
patent: 5486488 (1996-01-01), Kamiyama
Hirohito Watanabe et al., "An Advanced Techique for Fabricating Hemispherical-Grained (HSG) Silicon Storage Electrodes", IEEE Trans Electron Devices, vol. 42, No. 2, pp. 295-300 (Feb. 1995).
H. Watanabe et al., "Hemispherical Grained Silicon (HSG-Si) Formation of In-Situ Phosphorous Doped Amorphous-Si Using The Seeding Method", Extended abstracts of the 1992 International Conference on Solid State Devices and Materials, pp. 422-424 (1992).

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