Method of forming gates in semiconductor devices

Details Method of forming gates in semiconductor devices Method of forming gates in semiconductor devices

2006-01-17

2006-01-17

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S595000, C438S772000

Reexamination Certificate

active

06987056

ABSTRACT:
Disclosed is the method of forming the gate in the semiconductor device. The present method can prevent abnormal oxidization and lifting at the interface of the stack gate consisting of polysilicon and a metal and can be applied to even the single metal gate, by replacing a re-oxidization process for recovering damage of the gate oxide film generated in the gate patterning process with the oxygen plasma treatment.

REFERENCES:
patent: 5412246 (1995-05-01), Dobuzinsky et al.
patent: 6274429 (2001-08-01), Misra
patent: 6297172 (2001-10-01), Kashiwagi
patent: 6320238 (2001-11-01), Kizilyalli et al.
patent: 6720630 (2004-04-01), Mandelman et al.
patent: 6746925 (2004-06-01), Lin et al.
patent: 2002/0053711 (2002-05-01), Chau et al.
patent: 1999-46953 (1999-07-01), None
Wolf and Tauber, “Silicon processing For The VLSI Era”, vol. 1, p. 520, Lattice Press (1986).
Office Action from Korean Intellectual Property Office dated Mar. 16, 2005.

Affiliated with

Also associated with

Rating

Method of forming gates in semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming gates in semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming gates in semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3589799