Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-07
2007-08-07
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C257SE21278, C257SE29151
Reexamination Certificate
active
11119774
ABSTRACT:
A method of forming a gate insulation film of a crystallized thin film transistor, is provided, which can enhance an interfacial feature which exists between a gate oxide film and a silicon thin film substrate and which is fatal to performance of the thin film transistor, in the case that crystallization of amorphous silicon is performed by metal induced lateral crystallization (MILC). The gate insulation film formation method includes the steps of: forming an amorphous silicon film on an insulation substrate, and then patterning the amorphous silicon film, to thereby form a semiconductor layer; processing the semiconductor layer made of the amorphous silicon film by an oxygen plasma method, and oxidizing the silicon surface, to thereby form a first silicon oxide film; and mixing gas with silicon and depositing a second silicon oxide film on the first silicon oxide film by a PECVD (Plasma Enhanced Chemical Vapor Deposition) method.
REFERENCES:
patent: 6677222 (2004-01-01), Mishima et al.
patent: 7135741 (2006-11-01), Yamazaki et al.
patent: 2002/0113034 (2002-08-01), Moon et al.
patent: 2002/0113264 (2002-08-01), Horikoshi et al.
patent: 2002/0119607 (2002-08-01), Miyasaka et al.
patent: 2006/0183276 (2006-08-01), Yamazaki et al.
patent: 2006/0236920 (2006-10-01), Yamazaki et al.
patent: 2006/0255354 (2006-11-01), Arao et al.
Le Thao P.
Rosenberg , Klein & Lee
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