Method of forming gate insulation film, semiconductor...

Details Method of forming gate insulation film, semiconductor... Method of forming gate insulation film, semiconductor...

2011-03-29

2011-03-29

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S769000, C438S788000, C257S409000, C257S411000

Reexamination Certificate

active

07915177

ABSTRACT:
In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.

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