Method of forming gate electrode structure of a...

Details Method of forming gate electrode structure of a... Method of forming gate electrode structure of a...

2006-03-07

2006-03-07

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S680000

Reexamination Certificate

active

07008876

ABSTRACT:
A method of forming a gate structure of a semiconductor device includes forming a gate insulation film and a polysilicon film on a semiconductor substrate where an active region and a field region are defined, followed by forming a buffer layer on the polysilicon film to minimize damage to the polysilicon film during a subsequent ion implantation process. The polysilicon film is made electrically conductive by the implanting of impurities into the polysilicon film. Gate patterns are then formed by etching the conductive polysilicon film and the gate insulation film. Defects, such as active pitting, associated with dual electrodes are effectively prevented because the polysilicon film is protected during the ion implanting process.

REFERENCES:
patent: 6117743 (2000-09-01), Yeh et al.
patent: 6448112 (2002-09-01), Lee
patent: 6573574 (2003-06-01), Lee
patent: 6741501 (2004-05-01), Kobayashi
patent: 6818551 (2004-11-01), Jin et al.
patent: 5335503 (1993-12-01), None
patent: 2000138293 (2000-05-01), None

Affiliated with

Also associated with

Rating

Method of forming gate electrode structure of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming gate electrode structure of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming gate electrode structure of a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3604503