Method of forming gate electrode in semiconductor device

Details Method of forming gate electrode in semiconductor device Method of forming gate electrode in semiconductor device

1999-12-08

2000-12-26

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438595, 438663, 438664, 438655, H01L 213205

Patent

active

061658847

ABSTRACT:
A method of forming a gate electrode in a semiconductor device which can easily perform etching process for forming the gate electrode and reduce the resistivity of a gate electrode, is disclosed. In the present invention, a gate oxide layer, an amorphous silicon layer and a tungsten silicide layer are sequentially formed on a semiconductor substrate. A mask oxide pattern is then formed on the tungsten silicide layer in the shape of a gate electrode. Next, the tungsten silicide layer and the amorphous silicon layer are etched using the mask oxide pattern as an etch mask, to form a gate electrode. Thereafter, the amorphous silicon layer and the tungsten silicide layer of the gate electrode are thermal-treated by RTP spike annealing and an oxide layer is then formed on the side wall of the gate electrode. According to the present invention, by reducing resistivity of a tungsten silicide layer, it is possible to apply a conventional gate electrode material to high integration device over 1GDRAM, thereby lowering cost to develop a new gate electrode material. Furthermore, etching process for forming a gate electrode is easily performed when using the tungsten silicide layer as the gate electrode material, thereby obtaining uniform gate electrode. As a result, the reliability of a device is improved.

REFERENCES:
patent: 4833099 (1989-05-01), Woo
patent: 5364803 (1994-11-01), Lur et al.
patent: 5484743 (1996-01-01), Ko et al.
patent: 5500249 (1996-03-01), Telford et al.
patent: 5643633 (1997-07-01), Telford et al.
patent: 5665203 (1997-09-01), Lee et al.
patent: 5723893 (1998-03-01), Yu et al.
patent: 5736455 (1998-04-01), Iyer et al.
patent: 5796151 (1998-08-01), Hsu et al.
patent: 5858868 (1999-01-01), Hirade
patent: 5888588 (1999-03-01), Nagabushnam et al.
patent: 5895244 (1999-04-01), Wu
patent: 5937300 (1999-08-01), Sekine et al.
patent: 6028002 (2000-02-01), Thakur
patent: 6046090 (2000-04-01), Wu
patent: 6060741 (2000-05-01), Huang
patent: 6069044 (2000-05-01), Wu
patent: 6100188 (2000-08-01), Lu et al.

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