Method of forming gallium nitride crystal

Details Method of forming gallium nitride crystal Method of forming gallium nitride crystal

1998-04-08

2000-10-31

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 91, 117 99, 117102, 117952, C30B 2504

Patent

active

061396281

ABSTRACT:
The method of forming gallium nitride crystal comprises the following three steps: the first step of heating a silicon substrate 1 in gas atmosphere including gallium, the second step of forming the first gallium nitride 3 on the silicon substrate 1, the third step of forming the second gallium nitride 4 on the first gallium nitride 3 at the higher temperature than when the first gallium nitride 3 has been formed. The method including these three steps can produce a thick film crystal of gallium nitride having excellent flatness and crystallinity.

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patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5686738 (1997-11-01), Moustakas
patent: 5725674 (1998-03-01), Moustakas et al.
patent: 5847397 (1998-12-01), Moustakas

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