Method of forming gallium nitride crystal

Details Method of forming gallium nitride crystal Method of forming gallium nitride crystal

1997-08-26

1999-07-27

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 90, 117 94, C30B 2504

Patent

active

059284218

ABSTRACT:
To reduce a dislocation density within a gallium nitride crystal and make cleaving possible, after forming a thin film of silicon carbide and a first gallium nitride crystal on a silicon substrate, only the silicon substrate is removed in an acid solution such as hydrofluoric acid and nitric acid as they are mixed. Following this, a second gallium nitride crystal is formed on the remaining thin film of silicon carbide and the first gallium nitride crystal.

REFERENCES:
patent: 5637527 (1997-06-01), Porowski et al.
patent: 5667586 (1997-09-01), Ek et al.
patent: 5759908 (1998-06-01), Steckl et al.

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