Method of forming freestanding semiconductor layer

Details Method of forming freestanding semiconductor layer Method of forming freestanding semiconductor layer

2006-08-08

2006-08-08

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S489000, C438S700000, C438S760000, C438S761000, C438S763000, C438S778000

Reexamination Certificate

active

07087506

ABSTRACT:
A method of providing a freestanding semiconductor layer on a conventional SOI or bulk-substrate silicon device includes forming an amorphous or polycrystalline mandrel on a monocrystalline base structure. A conformal polycrystalline semiconductor layer is then formed on the mandrel and on the base structure, wherein the polycrystalline layer contacts the base structure. The polycrystalline semiconductor layer is then recrystallized so that it has a crystallinity substantially similar to that of the base structure. Thus, a freestanding semiconductor layer is formed with a high degree of control of the thickness and height thereof and maintaining a uniformity of thickness.

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