Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-07-14
2000-06-20
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438781, 257759, H01L 21469
Patent
active
060777923
ABSTRACT:
A method of forming an insulating material for use in an integrated circuit includes providing a substrate of the integrated circuit and forming a polymeric material on the substrate. At least a portion of the polymeric material is converted to a foamed polymeric material. The converting of the polymeric material includes exposing at least a portion of the polymeric material to a supercritical fluid. Further, an integrated circuit includes a substrate of the integrated circuit and a foamed polymeric material on at least a portion of the substrate. The integrated circuit may further include a conductive layer adjacent the foamed polymeric material. The conductive layer may be a metal line on the foamed polymeric material, or the conductive layer may be an interconnect, e.g., a contact or a via, adjacent the foamed polymeric material.
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Bowers Charles
Micro)n Technology, Inc.
Pert Evan
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