Method of forming fine metal pattern and method of forming...

Details Method of forming fine metal pattern and method of forming... Method of forming fine metal pattern and method of forming...

2005-12-29

2009-08-18

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S631000, C438S639000, C438S698000, C438S759000, C257SE21244, C257SE21444, C257SE21576, C257SE21579, C257SE21637, C257SE23144, C257SE23154, C257SE29158, C257SE29162, C257SE29165

Reexamination Certificate

active

07575995

ABSTRACT:
There are provided a method of forming a fine metal pattern and a method of forming a metal line using the same. In the method of forming a fine metal pattern, a substrate is prepared where a first interlayer insulating layer is formed. A via plug is formed on the first interlayer insulating layer. A plurality of sidewall buffer patterns are formed on the first interlayer insulating layer having the via plug, wherein the plurality of the sidewall buffer patterns are spaced apart from each other by a predetermined distance. The sidewall layer is deposited on the first interlayer insulating layer and the sidewall buffer patterns. The sidewall layer is etched such that sidewall patterns remains on sidewalls of the sidewall buffer patterns.

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patent: 100140485 (1998-03-01), None
Office Action from the Korean Intellectual Property Office, dated May 12, 2006, in related Korean Patent Application No. 10-2004-0114637.

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