Method of forming fine electrode on semiconductor substrate

Details Method of forming fine electrode on semiconductor substrate Method of forming fine electrode on semiconductor substrate

1997-06-16

1999-01-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438182, 438574, 438577, 438701, H01L 21338

Patent

active

058588248

ABSTRACT:
A dielectric film is formed on a semiconductor substrate, and on the dielectric film an inorganic dielectric mask film is deposited by CVD. The mask film comprises a first component which is relatively high in etch rate by isotropic plasma etching and a second component relatively low in etch rate, and the content of the first component is linearly gradient in the film thickness direction so as to become lowest at the interface between the mask film and the underlying dielectric film. For example, the mask film is a phosphosilicate glass (P.sub.2 O.sub.5 --SiO.sub.2) film. A resist film is formed on the mask film, and a window is opened in the resist film by electron beam lithography. Then a window is opened in the mask film by isotropic plasma etching, and the underlying dielectric film is also etched to form a window under the window in the mask film. In cross section, the window in the mask film is tapered toward the substrate by the effect of the gradient of the content of the first component in the mask film. So, the width of the window in the underlying dielectric film becomes narrower than the width of the window in the resist film. After removing the resist film and the mask film, a metal film is deposited on the exposed dielectric film so as to fill the narrow window. This method is useful for forming a T-shaped gate electrode of a heterojunction FET in which the gate length can be shortened to the extent of about 0.05 .mu.m.

REFERENCES:
patent: 5041397 (1991-08-01), Kim et al.

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