Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1994-06-15
1996-05-14
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 78, 216 67, 1566431, 1566461, 1566561, H05H 100
Patent
active
055159850
ABSTRACT:
In a method of forming a fine copper conductor pattern by dry etching, radiation having a predetermined wavelength or greater is applied to the surface of a substrate in order to accelerate the desorption of a compound which is formed of an etching gas and copper in the surface of a copper layer. The fine copper conductor pattern is anisotropically formed based on the linearity of the applied radiation and ions.
REFERENCES:
patent: 4693779 (1987-09-01), Okuhira et al.
patent: 4891488 (1990-01-01), Davis et al.
patent: 5183531 (1993-02-01), Terakado
patent: 5246529 (1993-09-01), Fukasawa et al.
patent: 5344525 (1994-09-01), Cathey, Jr.
Hosoi Nobuki
Ohshita Yoshio
Dang Thi
NEC Corporation
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