Method of forming film pattern, active matrix substrate,...

Details Method of forming film pattern, active matrix substrate,... Method of forming film pattern, active matrix substrate,...

2006-05-23

2008-05-13

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S783000, C438S780000, C438S508000, C438S508000

Reexamination Certificate

active

07371698

ABSTRACT:
A method of forming a film pattern includes the steps of forming a bank for partitioning a pattern forming area including a first pattern forming area and a second pattern forming area having an intersection with the first pattern forming area and divided in the intersection into sub-areas, disposing a functional liquid to the first pattern forming area to form a first film pattern, and disposing a functional liquid to the sub-areas to form second film patterns, executing a lyophobic process on the entire surface of a substrate including the first film pattern, the second film patterns, and the bank, weakening the lyophobicity on the substrate while selectively maintaining the lyophobicity on predetermined positions of the respective second film patterns formed in a divided condition after executing the lyophobic process, stacking a cap layer on the first film pattern and the second film patterns after weakening the lyophobicity, removing the lyophobicity in the predetermined positions of the respective second film patterns formed in the divided condition after stacking the cap layer, and forming a conductive film between the predetermined position of one of the second film patterns and the predetermined position of another of the second film patterns to electrically connect the second film patterns formed in the divided condition.

REFERENCES:
patent: 6861377 (2005-03-01), Hirai et al.
patent: 2006/0068616 (2006-03-01), Shintate et al.
patent: 11-274671 (1999-10-01), None

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