Method of forming film of tantalum oxide by plasma chemical vapo

Details Method of forming film of tantalum oxide by plasma chemical vapo Method of forming film of tantalum oxide by plasma chemical vapo

1992-01-27

1993-10-26

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4271263, 427255, 4272553, 427569, B05D 306, C23C 1600

Patent

active

052564550

ABSTRACT:
A method for depositing a thin film of tantalum oxide (Ta.sub.2 O.sub.5) with a large capacitance per unit area on a silicon surface by a plasma CVD process. The plasma used in the CVD process is generated by a high-frequency energy with a gas containing tantalum chloride (TaCl.sub.5) and dinitrogen oxide (N.sub.2 O). The intensity of the high-frequency energy increases from the start of the formation of the film of tantalum oxide until the end of the formation of the film. Increasing the intensity of the energy causes suppression of the growth of silicon oxide layers which are generated with the reactive plasma sputtering process going at the same time with the CVD process on the silicon surface.

REFERENCES:
patent: 4987005 (1991-01-01), Suzuki et al.
Y. Numasawa et al., "International Electron Devices Meeting 1989 Technical Digest", pp. 43-46, issued by the Electron Device Society of IEEE.

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