Method of forming etching mask

Details Method of forming etching mask Method of forming etching mask

2006-11-02

2008-12-16

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000

Reexamination Certificate

active

07465672

ABSTRACT:
The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2and H2gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

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