Method of forming emitter tips on a field emission display

Details Method of forming emitter tips on a field emission display Method of forming emitter tips on a field emission display

2005-07-12

2005-07-12

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S712000, C438S714000, C438S720000, C438S725000

Reexamination Certificate

active

06916748

ABSTRACT:
A method of forming emitter tips on a field emission display. A conductive layer is formed on a substrate, and then a photoresist layer is formed on the conductive layer wherein the photoresist layer has at least a pattern for defining predetermined areas of the emitter tips. Next, using plasma etching with the pattern of the photoresist layer as a mask, the conductive layer is etched to become a plurality of emitter stages. The etching rate of the conductive layer is greater than the etching rate of the photoresist layer. Finally, continuous use of plasma etching with an increased vertical-etching rate etches the lateral sidewalls of the emitter stages, thus shaping them as emitter tips.

REFERENCES:
patent: 5219485 (1993-06-01), Wang et al.
patent: 5647785 (1997-07-01), Jones et al.
patent: 6066507 (2000-05-01), Rolfson et al.
patent: 6095882 (2000-08-01), Wells et al.
patent: 6648710 (2003-11-01), Milligan et al.

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