Method of forming electrostatic discharge protection device for

Details Method of forming electrostatic discharge protection device for Method of forming electrostatic discharge protection device for

1997-06-12

1999-03-02

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257173, 257327, 257360, 257357, 361 56, 361 91, 361111, 361313, H01L 2972

Patent

active

058775340

ABSTRACT:
An electrostatic discharge (ESD) device includes a pair of depletion mode MOSFETs connected drain-to-drain in a series path between an input terminal and an output terminal, the gate of each MOSFET being connected to its source. A first diode having a relatively high breakdown voltage is connected between ground and the common drain terminal of the MOSFETs, and a second diode having a relatively low breakdown voltage is connected between ground and the output terminal of the device. The second diode breaks down during a relatively low, long-lived voltage spike (in an automobile, sometimes referred to as a "load dump"), while the second MOSFET saturates, limiting the size of the current through the second diode. The first diode breaks down during a large voltage spike of short duration, such as occurs from an ESD.

REFERENCES:
patent: 5060037 (1991-10-01), Rountree
Radio Fernsehen Electronik, vol. 42, No. 2, Feb. 1, 1993, p. 61 XP 000407295 `Announcement`.

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