Method of forming electrode pattern of semiconductor device

Details Method of forming electrode pattern of semiconductor device Method of forming electrode pattern of semiconductor device

1985-02-28

1987-03-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29591, 156646, 156652, 156656, 1566591, 20419212, 20419232, 427 89, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

046505431

ABSTRACT:
A method of forming an electrode pattern on a surface of a semiconductor substrate which comprises the steps of forming a metal film which is vulnerable to a reactive ion etching on a surface of the semiconductor substrate, forming on the metal film another metal film which is vulnerable to an ion milling but is resistant to the reactive ion etching, forming a resist pattern on the another metal film, selectively etching the another metal film by the ion milling using the resist pattern as a mask, and selectively etching the metal film by the reactive ion etching using the another metal film as a mask. A semiconductor device having an electrode pattern as formed by the above method is also disclosed.

REFERENCES:
patent: 3994758 (1976-11-01), Ogawa et al.
patent: 4272348 (1981-01-01), Cox et al.
patent: 4301233 (1981-11-01), Calviello
S. Takahashi et al., "Submicrometer Gate Fabrication of GaAs MESFET by Plasma Etching", IEEE Transactions on Electron Devices, vol. ED-25, No. 10, pp. 1213-1218, Oct. 1978.
Patent Abstracts of Japan, vol. 6, No. 254, Dec. 14, 1982, p. (E-148) (1131); and JP-A-57-153475 (Nippon Denki), 22-10-1982.

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