Method of forming electrode for semiconductor device

Details Method of forming electrode for semiconductor device Method of forming electrode for semiconductor device

2005-09-16

2008-10-28

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23011, C257SE21596

Reexamination Certificate

active

07442642

ABSTRACT:
The semiconductor device of the present invention and the method of the present invention, for forming the semiconductor device, form: a penetrating hole in a semiconductor wafer which has a first insulating film and an electrode pad formed on a first face of the semiconductor wafer, the penetrating hole being immediately below the electrode pad; and a second insulating film on an inner wall of the penetrating hole and on a second face of the semiconductor wafer. In forming the second insulating film, electrodeposition using the semiconductor wafer as a cathode is used. After the second insulating film is formed, the first insulating film is etched using the second insulating film as a mask, the back face of the electrode pad is exposed, and a conductor layer, acting as a penetrating electrode, is formed in the penetrating hole.

REFERENCES:
patent: 6856023 (2005-02-01), Muta et al.
patent: 2002/0124398 (2002-09-01), Sturni et al.
patent: 2003/0151144 (2003-08-01), Muta et al.
patent: 2004/0087126 (2004-05-01), Fartash
patent: 2005/0003649 (2005-01-01), Takao
patent: 2005/0067713 (2005-03-01), Mutta et al.
patent: 2005/0221601 (2005-10-01), Kawano
patent: 2006/0024966 (2006-02-01), Umemoto et al.
patent: 3186941 (2001-05-01), None
patent: 2001-351997 (2001-12-01), None
patent: 2003-289073 (2003-10-01), None
patent: 2003-309221 (2003-10-01), None
JP2006-32695 corresponds to US 2006/0024966 listed above.
JP2004-153269 corresponds to US 2004/0087126 listed above.

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