Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-21
2006-11-21
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C445S035000, C445S046000, C257SE21476
Reexamination Certificate
active
07138335
ABSTRACT:
A reducing agent is discharged by an ink-jet method into a groove between partition walls of a glass substrate formed by sandblasting, that is, a desired region where an electrode is to be formed. After fixing the reducing agent to the glass substrate, the entire substrate is immersed into a plating solution so as to reduce and deposit a plating catalytic metal contained in the plating solution in the region where the reducing agent is fixed. By immersing the entire substrate into an electroless plating solution, a metal is deposited by electroless plating in the region where the plating catalytic metal is deposited. The variation in the shape of electrodes to be formed is reduced, and mass production and low cost are achieved.
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Fukuta Shin'ya
Toyoda Osamu
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