Method of forming dummy pattern

Details Method of forming dummy pattern Method of forming dummy pattern

2007-08-13

2010-12-07

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

07849436

ABSTRACT:
A method of forming a dummy pattern on a mask for fabricating a semiconductor device is disclosed. The method may include a step of calculating a distance in a device isolation area between a first chip area and a second chip area having different pattern densities. In addition, the method may include comparing the distance and a first reference distance. The method may further include forming the dummy pattern in the device isolation area based on the comparison result. The dummy pattern may have a plurality of partitions. Each of the plurality of partitions may have a pattern density according to a position of the partition. A quantity of the partitions may be based on the comparison result. And at least one partition may have a pattern density which is substantially equal to an average of the pattern densities of the first and the second chip areas.

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Office Action from Korean Intellectual Property Office dated Aug. 28, 2007 in Korean Application No. 10-2006-0076189.

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