Method of forming dual damascene pattern

Details Method of forming dual damascene pattern Method of forming dual damascene pattern

2007-05-23

2010-02-16

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S618000, C438S626000, C438S636000, C438S703000, C257SE21029, C257SE21253, C257SE21259, C257SE21266, C257SE21579

Reexamination Certificate

active

07662711

ABSTRACT:
A method of forming a dual damascene pattern for a metal interconnection by a relatively simple process. Only a portion of an interlayer insulating film is initially etched when forming a via hole. When the interlayer insulating is etched to form a trench, the remaining portion of the via hole may be etched simultaneously.

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