Method of forming doped silicon in high aspect ratio openings

Details Method of forming doped silicon in high aspect ratio openings Method of forming doped silicon in high aspect ratio openings

1996-04-12

1999-01-26

Lusignan, Michael

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 99, 4272552, 4272557, 148DIG1, 148DIG122, 438668, 438680, 438684, C23C 1624

Patent

active

058635980

ABSTRACT:
A method of forming a doped silicon film on a substrate. According to the present invention, a substrate is placed in a reaction chamber and heated. Next, a silicon containing gas is fed into the reaction chamber to produce a silicon containing gas partial pressure of between 4 and 20 torr.

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patent: 5141892 (1992-08-01), Beinglass
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patent: 5614257 (1997-03-01), Beinglass et al.
H.M. Branz, et al.; "Hydrogenated Amorphous Silicon Prepared by Laser-Induced Chemical Vapor Deposition of Silane for Solar-Cell Applications"; Eighteenth IEEE Photovoltaic Specialists Conference--1985; Oct. 21-25, 1985; pp. 513-518.
W.A. Bryant; "The Kinetics of the Deposition of Silicon by Silane Pyrolysis at Low Temperatures and Atmospheric Pressure"; Thin Solid Films, 60 (1979) pp.19-25, (no month).
Jitendra S. Goela & Raymond L. Taylor; "Monolithic Material Fabrication by Chemical Vapour Deposition"; Journal of Materials Science 23 (1988); pp. 4331-4339, (no month).

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