Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-04-07
1997-08-05
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
427583, 427585, 438488, 438925, H01L 2122
Patent
active
056542305
ABSTRACT:
A doped film forming method comprising, the steps of preparing gas source for supplying a film forming gas into the process tube, gas source for supplying doping gases, in which a dope is included, into the process tube, a dry pump for exhausting the process tube, and an apparatus for burning a not-reacted element in waste gas, arranging a plurality of substrates in the process tube in such a way that they are separated from their adjacent ones by a certain interval, exhausting the process tube to keep it reduced in pressure, heating the substrates in the process tube to a temperature range of 500.degree.-600.degree. C., controlling amounts of the doping and film forming gases, while exhausting the process tube, at the ratio of the amount of the film forming gas to the amount of the doping gases being in the range of 1 to 1.625.times.10.sup.-3 to 2.125.times.10.sup.-3, and causing the doping and film forming gases to be reacted with the substrates.
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Hosaka Atsushi
Jintate Shinichi
Nishimura Toshiharu
Okamoto Yoshihiko
Bowers Jr. Charles L.
Mitsubishi Denki & Kabushiki Kaisha
Rao Ramamohan
Tokyo Electron Limited
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