Method of forming different silicide portions on different...

Details Method of forming different silicide portions on different... Method of forming different silicide portions on different...

2007-06-05

2007-06-05

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S231000, C438S592000

Reexamination Certificate

active

10282720

ABSTRACT:
A method is disclosed in which differing metal layers are sequentially deposited on silicon-containing regions so that the type and thickness of the metal layers may be adapted to specific characteristics of the underlying silicon-containing regions. Subsequently, a heat treatment is performed to convert the metals into metal silicides so as to improve the electrical conductivity of the silicon-containing regions. In this way, silicide portions may be formed that are individually adapted to specific silicon-containing regions so that device performance of individual semiconductor elements or the overall performance of a plurality of semiconductor elements may significantly be improved. Moreover, a semiconductor device is disclosed comprising at least two silicon-containing regions having formed therein differing silicide portions, wherein at least one silicide portion comprises a noble metal.

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U.S. Appl. No. 10/259,016, entitled “Semiconductor Device Having Different Metal-Semiconductor Portions Formed in a Semiconductor Region and a Method for Fabricating the Semiconductor Device,” filed Sep. 27, 2002.
U.S. Appl. No. 10/260,926, entitled “Semiconductor Device Having Different Metal Silicide Portions and Method for Fabricating the Semiconductor Device,” filed Sep. 30, 2002.

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