Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-01
2006-08-01
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S321000, C257S322000, C257S326000, C438S201000, C438S257000, C438S981000
Reexamination Certificate
active
07084453
ABSTRACT:
A semiconductor memory device and method for making the same, where a memory cell and high voltage MOS transistor are formed on the same substrate. An insulating layer is formed having a first portion that insulates the control and floating gates of the memory cell from each other, and a second portion that insulates the poly gate from the substrate in the MOS transistor. The insulating layer is formed so that its first portion has a smaller thickness than that of its second portion.
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Chern Geeng-Chuan
Lee Dana
Levi Amitay
DLA Piper Rudnick Gray Cary US LLP
Flynn Nathan J.
Mandala Jr. Victor A.
Silicon Storage Technology, Inc.
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