Method of forming dielectric thin films on silicon by low energy

Details Method of forming dielectric thin films on silicon by low energy Method of forming dielectric thin films on silicon by low energy

1987-04-30

1988-10-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156657, 20419211, 427 38, 437 34, 437239, 437242, H01L 2100, C23C 1400, B05D 306, B44C 122

Patent

active

047769254

ABSTRACT:
A low-energy oxygen and/or nitrogen ion beam with an energy level of about 60 eV is used to form an ultra-thin layer of silicon adduct on unheated silicon substrates. The ion beam is created with a single-grid Kaufman-type source and the process is performed in a vacuum chamber evacuated to a base pressure of about 3.times.10.sup.-7 torr with oxygen and/or nitrogen gases, with or without argon introduced into the chamber. FET-gate-quality oxides on the order of about 45 angstroms have been produced in the successful fabrication of n-channel MOSFET's.

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