Method of forming device isolating layer of semiconductor device

Details Method of forming device isolating layer of semiconductor device Method of forming device isolating layer of semiconductor device

1997-03-26

1999-07-27

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438439, 438443, 438297, H01L 2176

Patent

active

059306491

ABSTRACT:
A method of forming a device isolation layer of a semiconductor device includes the steps of forming a first buffer layer on the active region of a semiconductor substrate and forming an oxidation preventive layer on the first buffer layer. A second buffer layer is formed on the semiconductor substrate, and an oxidation preventive side wall is formed on the side parts of the first buffer layer and the oxidation preventive layer. A recess or a trench is formed next to the sidewall, and a device isolation layer is formed in the recess or the trench by oxidation.

REFERENCES:
patent: 4272308 (1981-06-01), Varshney
patent: 4292156 (1981-09-01), Matsumoto et al.
patent: 4580330 (1986-04-01), Pollack et al.
patent: 5134089 (1992-07-01), Barden et al.
patent: 5369051 (1994-11-01), Rao et al.
patent: 5422300 (1995-06-01), Pfiester et al.
patent: 5470783 (1995-11-01), Chiu et al.
patent: 5538917 (1996-07-01), Kunitou
patent: 5679601 (1997-10-01), Wu

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