Method of forming damascene structures

Details Method of forming damascene structures Method of forming damascene structures

2007-03-13

2007-03-13

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C430S317000

Reexamination Certificate

active

10904877

ABSTRACT:
A method of forming damascene structures. A substrate including a dielectric layer thereon is provided. The dielectric layer has a plurality of via holes. A gap filler is formed into each via hole. Subsequently, a first anti-reflective coating (ARC) film and a second ARC film are consecutively formed on the dielectric layer. A photoresist pattern for defining a trench pattern is formed on the second ARC film. Following that, an etching process is performed to remove an upper part of the dielectric layer left uncovered by the photoresist pattern to form a plurality of trenches.

REFERENCES:
patent: 6277750 (2001-08-01), Pawlowski et al.
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patent: 6664177 (2003-12-01), Lin et al.
patent: 6762012 (2004-07-01), Kim et al.
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patent: 2003/0085408 (2003-05-01), Yang et al.
patent: 2004/0142554 (2004-07-01), Lui et al.
patent: 2005/0118749 (2005-06-01), Sakamoto et al.

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