Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-12-18
2007-12-18
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C257S758000
Reexamination Certificate
active
10906552
ABSTRACT:
A method of forming a semiconductor device, and the device so formed. Depositing a low dielectric constant material on a substrate. Depositing a hard mask on the low dielectric constant material. Forming an at least one first feature within the low dielectric constant material and the hard mask. Depositing a conformal liner over the hard mask and within the at least one feature, wherein the liner occupies more than at least 2% of a volume of the at least one feature, and wherein a thickness of the liner is at least approximately ⅓ a minimum width of the at least one feature. Metallizing the at least one feature.
REFERENCES:
patent: 2004/0061229 (2004-04-01), Moslehi
patent: 2005/0064701 (2005-03-01), Dalton et al.
patent: 2006/0030128 (2006-02-01), Bu et al.
Anderson Brent A.
Bryant Andres
Gambino Jeffrey P.
Stamper Anthony K.
Canale Anthony J.
Dahimene Mahmoud
International Business Machines - Corporation
Norton Nadine G.
Schmeiser Olsen & Watts
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