Method of forming crystalline silicon carbide coatings at low te

Details Method of forming crystalline silicon carbide coatings at low te Method of forming crystalline silicon carbide coatings at low te

1993-08-16

1995-05-16

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 97, 427450, 427249, 437100, C30B 2510

Patent

active

054151260

ABSTRACT:
A method of forming crystalline silicon carbide films is disclosed. The method comprises a chemical vapor deposition process in which a substrate is heated to a temperature above about 600.degree. C. in the presence of a silicon containing cyclobutane gas.

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