Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-31
2009-06-30
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21503
Reexamination Certificate
active
07553753
ABSTRACT:
A method of forming an embedded device build-up package (10) includes forming a first plurality of features (22) over a packaging substrate (12,16,18), wherein the first plurality of features (22) comprises a first feature and a second feature, forming at least a first crack arrest feature (28) in a first crack arrest available region (26), wherein the first crack arrest available region is between the first feature and the second feature, forming a second plurality of features (32) over the first plurality of features (22) wherein the second plurality of features includes a third feature and a fourth feature, and forming at least a second crack arrest feature (36) in a second crack arrest available region (34), wherein the second crack arrest feature (36) is between the third feature and the fourth feature, and the second crack arrest feature (36) is substantially orthogonal to the first crack arrest feature (28).
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Liu, X. H. et al.; “Developing design rules to avert cracking and debonding in integrated circuit structures”; Engineering Fracture Mechanics 66; 2000; pp. 387-402; Elsevier Science Ltd.; USA.
Leal George R.
Pozder Scott K.
Wenzel Robert J.
Zhao Jie-Hua
Chaudhari Chandra
Freescale Semiconductor Inc.
Hill Susan C.
Vo Kim-Marie
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