Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-08
2006-08-08
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S660000, C438S687000
Reexamination Certificate
active
07087524
ABSTRACT:
The present invention relates to a method of forming a copper wiring in a semiconductor device. A copper wiring is formed within a damascene pattern. Before a copper anti-diffusion insulating film is formed on the entire structure, a specific metal element is doped into the surface of the copper wiring and the surface of its surrounding insulating film to form a metal element-doping layer. The doped specific metal element reacts with surrounding other elements, due to heat upon depositing the copper anti-diffusion insulating film and a low dielectric constant interlayer insulating film and additional annealing process. For this reason, a copper alloy layer and a metal oxide layer are stacked at the interface of the copper wiring and the copper anti-diffusion insulating film and the metal oxide layer is formed at the interface of the insulating film and the copper anti-diffusion insulating film. The interfacial bondability between the copper anti-diffusion insulating film and each of the copper wiring and the insulating film underlying the insulating film is increased to improve reliability of the wiring.
REFERENCES:
patent: 6753610 (2004-06-01), Fukiage
patent: 6815331 (2004-11-01), Lee et al.
patent: 2002/0076925 (2002-06-01), Marieb et al.
Office Action issued by Korean Intellectual Property Office dated Jul. 11, 2005 (2 pages).
Dang Phuc T.
Hynix / Semiconductor Inc.
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