Method of forming copper wire on semiconductor device

Details Method of forming copper wire on semiconductor device Method of forming copper wire on semiconductor device

2005-04-12

2005-04-12

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S638000, C438S645000, C438S687000, C438S629000, C438S634000

Reexamination Certificate

active

06878617

ABSTRACT:
Disclosed is a method of forming a copper wire on a semiconductor device capable of preventing the natural oxidation of copper. The method comprises the steps of: forming an insulation film pattern having vias and trenches on a semiconductor substrate; forming a copper wire by filling up the vias and the trenches with copper; successively forming a capping layer and a protective layer on the copper wire and the insulation film pattern; exposing the copper wire by selectively removing the capping layer and the protective layer; and forming an oxidation-prevention layer on the copper wire. According to the present invention, the natural oxidation of copper is avoided by selectively depositing aluminum on a copper wire pad, and therefore a dependable evaluation is possible from tests of reliability in a high temperature. Furthermore, since aluminum has a lower contact resistance compared with copper, dependable test results are obtained during tests of electrical characteristics.

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