Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Depositing predominantly single metal or alloy coating on...
Reexamination Certificate
2001-03-15
2004-05-25
Nicolas, Wesley A. (Department: 1741)
Electrolysis: processes, compositions used therein, and methods
Electrolytic coating
Depositing predominantly single metal or alloy coating on...
C205S291000, C205S292000, C205S296000, C205S239000, C205S083000, C205S084000
Reexamination Certificate
active
06740221
ABSTRACT:
BACKGROUND OF THE DISCLOSURE
1. Field of the Invention
The invention relates to a method of forming copper interconnects.
2. Background of the Invention
Electromigration can lead to considerable material transport in metal films, and electromigration-induced failure is one the most important modes of failure in metal lines in Very Large Scale Integration (VLSI) circuits. The directional mobility of atoms are enhanced by the presence of grain boundaries, dislocation, and point defects in metal films. In the case of aluminum, electromigration leads to a transport and accumulation of aluminum in the direction of electron flow, resulting in discontinuities in the metal lines. Electromigration resistance in aluminum can be improved by the addition of copper, e.g., between about 0.5% to about 1%, to the aluminum films. It is believed that copper addition results in a change in the texture of aluminum films and an increase in the activation energy for aluminum self-diffusion, which in turn results in an improvement in electromigration resistance.
Copper has gained increasing popularity as a metal interconnect in advanced integrated circuit fabrication. Despite its significantly higher electromigration resistance compared to aluminum, there is an ongoing need to provide methods for improving electromigration resistance in copper interconnects.
SUMMARY OF THE INVENTION
The invention generally provides a method of forming a copper layer having improved electromigration characteristics. According to embodiments of the invention, a doped copper layer is formed by controlling an amount of a non-metal dopant incorporated in the doped copper layer. In one embodiment, the non-metal dopant is carbon, and the doped copper layer is formed by electroplating.
REFERENCES:
patent: 3522155 (1970-07-01), Dow
patent: 4187166 (1980-02-01), Kruper
patent: 4356067 (1982-10-01), McCoy
patent: 4389286 (1983-06-01), McCoy
patent: 4396467 (1983-08-01), Anthony
patent: 4466864 (1984-08-01), Bacon et al.
patent: 4496436 (1985-01-01), Inoue
patent: 4789437 (1988-12-01), Sing et al.
patent: 4855016 (1989-08-01), Jucha et al.
patent: 4869971 (1989-09-01), Nee et al.
patent: 5084356 (1992-01-01), Deak et al.
patent: 5141602 (1992-08-01), Chen et al.
patent: 5302256 (1994-04-01), Miura et al.
patent: 5418002 (1995-05-01), Paik et al.
patent: 5493132 (1996-02-01), Brugge et al.
patent: 5580668 (1996-12-01), Kellam
patent: 5705230 (1998-01-01), Matanabe et al.
patent: 5744019 (1998-04-01), Ang
patent: 5833920 (1998-11-01), Nakanishi et al.
patent: 5882425 (1999-03-01), Graham
patent: 5882498 (1999-03-01), Dubin et al.
patent: 5907790 (1999-05-01), Kellam
patent: 5911113 (1999-06-01), Yao et al.
patent: 5985048 (1999-11-01), Wahlert et al.
patent: 5985126 (1999-11-01), Bleck et al.
patent: 6063506 (2000-05-01), Andricacos et al.
patent: 6066892 (2000-05-01), Ding et al.
patent: 6077571 (2000-06-01), Kaloyeros et al.
patent: 6099712 (2000-08-01), Ritzdorf et al.
patent: 6110817 (2000-08-01), Tsai et al.
patent: 6120641 (2000-09-01), Stevens et al.
patent: 6130156 (2000-10-01), Havemann et al.
patent: 6136163 (2000-10-01), Cheung et al.
patent: 6143126 (2000-11-01), Stevens
patent: 6171960 (2001-01-01), Lee
patent: 6176996 (2001-01-01), Moon
patent: 6183619 (2001-02-01), Gillman et al.
patent: 6195248 (2001-02-01), Kunishi et al.
patent: 6197181 (2001-03-01), Chen
patent: 6242349 (2001-06-01), Nogami et al.
patent: 6245672 (2001-06-01), Hong et al.
patent: 6251249 (2001-06-01), Chevalier et al.
patent: 6267863 (2001-07-01), Abys et al.
patent: 6268291 (2001-07-01), Andricacos et al.
patent: 6277263 (2001-08-01), Chen
patent: 6290833 (2001-09-01), Chen
patent: 6303498 (2001-10-01), Chen et al.
patent: 6303505 (2001-10-01), Ngo et al.
patent: 6319387 (2001-11-01), Krishnamoorthy et al.
patent: 6331490 (2001-12-01), Stevens et al.
patent: 6344281 (2002-02-01), Smith et al.
patent: 6346470 (2002-02-01), Nogami et al.
patent: 6358388 (2002-03-01), Bleck et al.
patent: 6358848 (2002-03-01), Lopatin
patent: 6368475 (2002-04-01), Hanson et al.
patent: 6368966 (2002-04-01), Krishnamoorthy et al.
patent: 6376374 (2002-04-01), Stevens
patent: 6387805 (2002-05-01), Ding et al.
patent: 6432819 (2002-08-01), Pavate et al.
patent: 6491806 (2002-12-01), Dubin et al.
patent: 2001/0014408 (2001-08-01), Mitsuhashi et al.
patent: 2001/0050233 (2001-12-01), Uzoh et al.
patent: 2002/0050628 (2002-05-01), Krishnamoorthy et al.
patent: 0 048 579 (1982-03-01), None
patent: 1 091 023 (2001-04-01), None
patent: 2000 174027 (2000-06-01), None
patent: 1 050 902 (2000-11-01), None
patent: 2001 172791 (2001-06-01), None
patent: 98/27585 (1998-06-01), None
International Search Report dated Dec. 9, 2002, for PCT/US02/07845.
Chen Liang-Yuh
Cheung Robin
Applied Materials Inc.
Moser Patterson & Sheridan
Nicolas Wesley A.
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