Method of forming contacts using auxiliary structures

Details Method of forming contacts using auxiliary structures Method of forming contacts using auxiliary structures

2005-08-31

2008-08-26

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S640000, C257SE21476

Reexamination Certificate

active

07416976

ABSTRACT:
A semiconductor product includes a substrate having a substrate surface. A plurality of wordlines are arranged at a distance from one another and running along a first direction. A plurality of conductive contact structures are provided between the wordlines. The product also includes a plurality of filling structures. Each filling structure separates from one another two respective contact structures arranged between two respective wordlines. The two respective contact structures are arranged at a distance from one another in the first direction. In the preferred embodiment, the contact structures have a top side provided at a distance from the substrate surface and extends to the substrate surface. The contact structures at the substrate surface have a width along the first direction that is larger than a width of the top sides of the contact structures along the first direction.

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