Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1996-12-13
1999-04-06
Kunemund, Robert
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438596, 438633, 438639, H01L 21302
Patent
active
058918051
ABSTRACT:
A method of forming a contact is disclosed. A substrate having a desired electrical contact location is provided. The substrate has a conductive layer. A first mask with an edge over the desired electrical contact location is formed on the substrate. A contact material is deposited over the first mask and the substrate. A first portion of the contact material is then removed such that a second portion of the contact material remains to form a contact adjacent to the edge of the mask, over the desired electrical contact location.
REFERENCES:
patent: 4358340 (1982-11-01), Fu
patent: 4648937 (1987-03-01), Ogura et al.
patent: 5231042 (1993-07-01), Ilderem et al.
patent: 5254498 (1993-10-01), Sumi
patent: 5292689 (1994-03-01), Cronin et al.
patent: 5420067 (1995-05-01), Hsu
patent: 5462893 (1995-10-01), Matsuoka et al.
patent: 5472901 (1995-12-01), Kapoor
patent: 5474651 (1995-12-01), Huebner
patent: 5488013 (1996-01-01), Geffken et al.
patent: 5529956 (1996-06-01), Morishita
patent: 5595941 (1997-01-01), Okamoto et al.
patent: 5639686 (1997-06-01), Hirano et al.
patent: 5658830 (1997-08-01), Jeng
Horstmann, J.T., et al.; "Characterization of Sub-100 nm-MIS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique"; Micro-and Nano-Engineering 95; Aix En Provence, France; Sep. 26-28, 1995; Section P1.
M. Bohr; "Interconnect Scaling--The Real Limiter to High Performance ULSI"; IEDM Proc.; 1995; pp. 241-243.
Cheng Peng
Doyle Brian S.
Alanko Anita
Intel Corporation
Kunemund Robert
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