Method of forming contact profile by improving TEOS/BPSG selecti

Details Method of forming contact profile by improving TEOS/BPSG selecti Method of forming contact profile by improving TEOS/BPSG selecti

1996-08-29

1999-03-16

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438673, 438701, 438978, H01L 21469

Patent

active

058830022

ABSTRACT:
A contact opening formation process is disclosed for forming an opening having a positive base profile. This opening is formed by etching a pre-metal dielectric layer of an undoped oxide underlayer covered by a BPSG overlayer. The etching is performed using an etchant that etches the BPSG layer faster than the oxide underlayer. The etching solution is by weight at least 97.35% distilled water, 0.45% of HF and 2.2% of NH.sub.4 F.

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