Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-30
2000-02-22
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
463637, 463627, 463629, 463643, 463653, 463672, 463685, H01L 214763
Patent
active
06028000&
ABSTRACT:
The present invention discloses a forming method for metal wiring in a semiconductor device with different sized contact holes. The metal wiring in a semiconductor device according to the present invention is formed by the following processes. First, a semiconductor substrate on which an insulation film having a plurality of different sized contact holes is formed is provided. A barrier metal layer is then formed on the substrate and a first tungsten film is formed on entire surface of the barrier metal layer thick enough to fill relatively smaller contact hole among the different sized contact holes. Next, the first tungsten film and the barrier metal layer are removed to expose the top surface of the insulation film. A second tungsten film is formed selectively on the contact holes thick enough to completely fill relatively larger contact hole among the different sized contact holes and the surface of the substrate is then planarized.
REFERENCES:
patent: 4987099 (1991-01-01), Flanner
patent: 5260232 (1993-11-01), Muroyama et al.
patent: 5648298 (1997-07-01), Cho
patent: 5670427 (1997-09-01), Cho
Wolf, Silicon Processing for the VLSI Era:vol. 2-Process Integration, Lattice Press, pp. 247-248, 1990.
Hyundai Electronics Industries Co,. Ltd.
Niebling John F.
Zarneke David A.
LandOfFree
Method of forming contact plugs in semiconductor device having d does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming contact plugs in semiconductor device having d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming contact plugs in semiconductor device having d will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-520207