Method of forming contact plug in semiconductor device

Details Method of forming contact plug in semiconductor device Method of forming contact plug in semiconductor device

2005-12-06

2008-03-04

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000

Reexamination Certificate

active

07338899

ABSTRACT:
A method of forming a contact plug of a semiconductor device wherein, after a contact plug is formed in an interlayer insulation film, the interlayer insulation film is selectively etched so that the top surface of the contact plug is higher than the top surface of the interlayer insulation film. It is thus possible to prevent generation of voids when a subsequent metal layer is formed in the interlayer insulation film.

REFERENCES:
patent: 4936950 (1990-06-01), Doan et al.
patent: 6040242 (2000-03-01), Kakehashi
patent: 6221775 (2001-04-01), Ference et al.
patent: 6713384 (2004-03-01), Elliott et al.
patent: 2004/0216843 (2004-11-01), Peng

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