Method of forming contact plug

Details Method of forming contact plug Method of forming contact plug

1998-09-14

2000-11-14

Elms, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438782, 437187, H01L 214763

Patent

active

061469904

ABSTRACT:
A method for preventing a contact plug on a semiconductor substrate from being poisoned. A part of the metal layer with a large and flat surface region is removed to result in a plurality of metal layers with smaller surface areas on the substrate. A first dielectric layer is formed on the metal layers. A spin-on-glass layer is formed on the first dielectric layer. The spin-on-glass layer is etched back until the first dielectric layer is exposed. A second dielectric layer is formed on the spin-on-glass layer. At lease an opening is formed to penetrate through the second dielectric layer, the spin-on-glass layer and the first dielectric layer. The opening is filled with a contact plug.

REFERENCES:
patent: 5702980 (1997-12-01), Yu et al.
patent: 5792702 (1998-08-01), Liang
patent: 6001745 (1999-12-01), Tu et al.

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