Method of forming contact pads

Details Method of forming contact pads Method of forming contact pads

2007-01-23

2007-01-23

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S700000, C438S707000, C438S710000

Reexamination Certificate

active

11196024

ABSTRACT:
In a method of forming a semiconductor structure, a substrate comprising at least one contact pad is provided. A passivation layer is formed over the substrate. A mask which does not cover a portion of the passivation layer located over the at least one contact pad is formed over the passivation layer. An etching process adapted to remove a material of the passivation layer is performed and the mask is removed. Then, a second etching process adapted to remove residues of the passivation layer from the contact pad can be performed. The removal of the mask may be performed at a temperature of the substrate in a range from about −20° C. to about 100° C. The second etching process can comprise exposing the substrate to a gaseous etchant comprising hydrogen and fluorine, an amount of hydrogen in the etchant being about equal to an amount of fluorine, or greater. Thus, a formation of oxides and/or fluorides on the at least one contact pad can be avoided.

REFERENCES:
patent: 6271115 (2001-08-01), Liu et al.
patent: 2005/0160575 (2005-07-01), Gambino et al.
patent: 197 30 322 (1998-01-01), None
patent: 10154720 (1998-06-01), None
patent: 2004179486 (2004-06-01), None

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