Method of forming contact holes of reduced dimensions by using i

Details Method of forming contact holes of reduced dimensions by using i Method of forming contact holes of reduced dimensions by using i

1996-11-13

1999-04-20

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430317, 216 17, 216 46, G03F 700

Patent

active

058957405

ABSTRACT:
A method of forming cavities in a non-conducting layer on a semiconductor device is provided which can be carried out by first providing a pre-processed semi-conducting substrate which has a non-conducting layer and a patterned photoresist layer sequentially deposited and formed on top, and then conformally depositing a polymeric material layer on top of the non-conducting and the photoresist layer, and then etching the polymeric material layer to form polymeric sidewall spacers on the patterned photoresist layer, and then etching cavities in the non-conducting layer to expose the semi-conducting substrate. The polymeric sidewall spacers formed on the sidewalls of the photoresist openings allow the fabrication of cavities such as contact holes or line spacings of reduced dimensions while utilizing a conventional low cost photolithographic method for patterning.

REFERENCES:
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 4838991 (1989-06-01), Cote et al.
patent: 5296410 (1994-03-01), Yang
patent: 5459099 (1995-10-01), Hsu
patent: 5567658 (1996-10-01), Wang et al.
patent: 5593813 (1997-01-01), Kim

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