Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-15
1998-10-20
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438637, 438648, 438661, 438663, H01L 2128
Patent
active
058245979
ABSTRACT:
An improved contact hole plug and method are disclosed, the plug connecting a first conductive layer to a second conductive layer which is insulated from the first conductive layer. The contact hole plug may be formed using the steps of: (1) forming a first conductive layer consisting of a multi-layer metal (2) forming an inter-layer insulating film, and a contact hole therein; and (3) carrying out a rapid heat treatment which causes an alloy reaction in the multi-layer metal, and the resulting alloy expands to form a plug in the contact hole. The rapid heat treatment may be accomplished with a heat treatment furnace or a rapid thermal annealing (RTA) process at a temperature of 300.degree.-600.degree. C. for about 30 seconds (RTA) or 30 minutes (heating furnace).
REFERENCES:
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5252177 (1993-10-01), Hong et al.
patent: 5266521 (1993-11-01), Lee et al.
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5312775 (1994-05-01), Fujii et al.
patent: 5332691 (1994-07-01), Kinoshita et al.
patent: 5385868 (1995-01-01), Chao et al.
patent: 5399527 (1995-03-01), Tabara
patent: 5418187 (1995-05-01), Miyanaga et al.
patent: 5543357 (1996-08-01), Yamada et al.
patent: 5552341 (1996-09-01), Lee
patent: 5561084 (1996-10-01), Takoto
Jawarani et al.; "Intermetallic Compound Formation in Ti/Al Alloy Thin Film Couples and Its Role in Electromigration Lifetimes"; J. Electrochem. Soc., vol. 141, No. 1,01,94; pp. 302-306, Jan. 1994.
Colgan et al.; "Thin-Film reactions of Al with Co. Cr, Mo, Ta, Ti, and W"; J. Mater. Res., vol. 4, No. 4 Jul./Aug. 89; pp. 815-820.
Bilodeau Thomas G.
LG Semicon Co. Ltd.
Niebling John
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