Method of forming contact hole and multilayered lines structure

Details Method of forming contact hole and multilayered lines structure Method of forming contact hole and multilayered lines structure

1997-12-01

1999-10-05

Arroyo, Teresa M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438648, H01L 2144, H01L 21461

Patent

active

059638265

ABSTRACT:
A method of providing a contact hole including (a) depositing a first conductive film on a substrate and patterning the first conductive film to form a first electrode line, (b) depositing an insulating film on the first electrode line and the substrate, (c) forming a contact hole in the insulating film over a top surface of the first electrode line, and (d) depositing a second conductive film on the insulating film and the contact hole and patterning the second conductive film to form a second electrode line, wherein a surface of the first conductive film is subjected to an oxidizing operation in step (a) so that a contact resistance of the contact hole is lowered.

REFERENCES:
patent: 3851161 (1974-11-01), Cummingham et al.
patent: 5236551 (1993-08-01), Pan
patent: 5427962 (1995-06-01), Sasaki et al.
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5591670 (1997-01-01), Park et al.
patent: 5661344 (1997-08-01), Havemann et al.

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