Method of forming contact hole

Details Method of forming contact hole Method of forming contact hole

2006-09-26

2006-09-26

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C216S096000, C216S103000, C134S001300, C252S079100, C438S624000, C438S637000, C438S651000, C438S700000, C438S724000

Reexamination Certificate

active

07112530

ABSTRACT:
A method of forming a contact hole in a semiconductor device, by which a PMD layer as an insulating interlayer is prevented from being overetched by wet cleaning for removing polymer and photoresist after forming a contact hole perforating the PMD layer in a manner of adjusting temperature and concentration of an NC-2 solution for the wet cleaning. The present invention includes the steps of forming a premetal dielectric layer on a semiconductor substrate, forming a contact hole perforating the premetal dielectric layer, and cleaning the substrate using an NC-2 cleaning solution at a temperature equal to or lower than about 55° C.

REFERENCES:
patent: 6838330 (2005-01-01), Moon et al.
W.Kern, Handbook of Semiconductor Wafer Cleaning Technology, Noyes Publications, (1993), pp. 127-128.

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