Method of forming contact for dual liner product

Details Method of forming contact for dual liner product Method of forming contact for dual liner product

2007-10-16

2007-10-16

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S655000, C257S750000

Reexamination Certificate

active

11492456

ABSTRACT:
A method is provided of forming a contact to a semiconductor structure. A current-conducting member is formed which extends horizontally over a first portion of a semiconductor device region but not over a second portion of such semiconductor device region. A first film is formed which extends over the second portion and only partially over the member to expose a contact portion of the member. A first contact via is formed in conductive communication with the contact portion. The first contact via has a silicide-containing region self-aligned to an area of the member contacted by the contact via. A second contact via is formed in conductive communication with the second portion, the second contact via extending through the first film.

REFERENCES:
patent: 6211035 (2001-04-01), Moise et al.
patent: 6599813 (2003-07-01), Beyer et al.
patent: 6943398 (2005-09-01), Ito et al.
patent: 2003/0222299 (2003-12-01), Miura

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