Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-13
2007-11-13
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S638000, C438S673000
Reexamination Certificate
active
11164480
ABSTRACT:
A method of forming a contact is provided. A substrate having at least two conductive devices is provided. A spacing is located between the two conductive devices. A first dielectric layer is formed over the substrate to cover the two conductive devices and the spacing. A seam is formed in the first dielectric layer within the spacing. Then, a portion of the first dielectric layer is removed to form an opening so that the width of the seam is expanded. A second dielectric layer is formed over the first dielectric layer to fill the opening. A portion of the second dielectric layer and a portion of the first dielectric layer within the spacing are removed until a portion of the surface of the substrate is exposed and a contact opening is formed in the location for forming the contact. Finally, conductive material is deposited to fill the contact opening.
REFERENCES:
patent: 5001079 (1991-03-01), van Laarhoven et al.
patent: 6423630 (2002-07-01), Catabay et al.
Chen Neng-Kuo
Hsu Shao-Ta
Huang Chien-Chung
Tsai Teng-Chun
Yang Chao-Lon
Jianq Chyun IP Office
Le Dung A.
United Microelectronics Corp.
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